Strain of the micro-sized cone-shape GeSi alloy film determined by raman scattering

C. T. Chia, L. J. Chen, V. I. Mashanov, H. H. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The micro-sized cone-shaped GeSi alloy film was analyzed using micro-Raman scattering. The optical and electric properties of Si1-xGei x alloy grown on Si substrate were strongly influenced by the Ge concentration and the build-in strain. The sample structure was high doped pseduomorphic layers Ge0.1Si0.9/Ge0.4Si 0.6 grown on undoped Si buffer layer. The bending layers formed a micro-sized cone-shape film and one side of those layers were attached to the substrate. Results indicate that the Raman phonon shift of curved surface is strongly indepedent on the Ge concentration and the curvature of the film.

Original languageEnglish
Title of host publication2004 1st IEEE International Conference on Group IV Photonics
Pages107-109
Number of pages3
Publication statusPublished - 2004 Dec 1
Event2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
Duration: 2004 Sep 292004 Oct 1

Publication series

Name2004 1st IEEE International Conference on Group IV Photonics

Other

Other2004 1st IEEE International Conference on Group IV Photonics
CountryHong Kong
CityHong Kong, China
Period04/9/2904/10/1

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Keywords

  • GeSi alloy
  • Raman scattering
  • Strain

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chia, C. T., Chen, L. J., Mashanov, V. I., & Cheng, H. H. (2004). Strain of the micro-sized cone-shape GeSi alloy film determined by raman scattering. In 2004 1st IEEE International Conference on Group IV Photonics (pp. 107-109). (2004 1st IEEE International Conference on Group IV Photonics).