Strain modulation of SiGe virtual substrate

W. S. Tan; H. H. Cheng; V. I. Mashanov; Y. F. Wong; C. T. Chia

doi:10.1063/1.2197304

Strain modulation of SiGe virtual substrate

W. S. Tan^*, H. H. Cheng, V. I. Mashanov, Y. F. Wong, C. T. Chia

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

Original language	English
Article number	162111
Journal	Applied Physics Letters
Volume	88
Issue number	16
DOIs	https://doi.org/10.1063/1.2197304
Publication status	Published - 2006 Apr 17

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Strain modulation of SiGe virtual substrate",

abstract = "We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.",

author = "Tan, {W. S.} and Cheng, {H. H.} and Mashanov, {V. I.} and Wong, {Y. F.} and Chia, {C. T.}",

note = "Funding Information: This work was supported by the National Science Council under Grant No. 94-2112-M-002 and United Microelectronics Corporation.",

year = "2006",

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T1 - Strain modulation of SiGe virtual substrate

AU - Tan, W. S.

AU - Cheng, H. H.

AU - Mashanov, V. I.

AU - Wong, Y. F.

AU - Chia, C. T.

N1 - Funding Information: This work was supported by the National Science Council under Grant No. 94-2112-M-002 and United Microelectronics Corporation.

PY - 2006/4/17

Y1 - 2006/4/17

N2 - We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

AB - We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

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U2 - 10.1063/1.2197304

DO - 10.1063/1.2197304

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VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162111

ER -

Strain modulation of SiGe virtual substrate

Abstract

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