Strain modulation of SiGe virtual substrate

W. S. Tan, H. H. Cheng, V. I. Mashanov, Y. F. Wong, C. T. Chia

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We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

Original languageEnglish
Article number162111
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2006 Apr 17


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tan, W. S., Cheng, H. H., Mashanov, V. I., Wong, Y. F., & Chia, C. T. (2006). Strain modulation of SiGe virtual substrate. Applied Physics Letters, 88(16), [162111].