Strain-induced growth of SiO2 dots by liquid phase deposition

C. W. Liu; B. C. Hsu; K. F. Chen; M. H. Lee; C. R. Shie; Pang Shiu Chen

doi:10.1063/1.1542682

Strain-induced growth of SiO₂ dots by liquid phase deposition

C. W. Liu^*, B. C. Hsu, K. F. Chen, M. H. Lee, C. R. Shie, Pang Shiu Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Liquid phase deposition method was used to deposit SiO₂ dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

Original language	English
Pages (from-to)	589-591
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	4
DOIs	https://doi.org/10.1063/1.1542682
Publication status	Published - 2003 Jan 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1542682

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@article{3841ac60f6534e9b852830e61d06e2c9,

title = "Strain-induced growth of SiO2 dots by liquid phase deposition",

abstract = "Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.",

author = "Liu, {C. W.} and Hsu, {B. C.} and Chen, {K. F.} and Lee, {M. H.} and Shie, {C. R.} and Chen, {Pang Shiu}",

year = "2003",

month = jan,

day = "27",

doi = "10.1063/1.1542682",

language = "English",

volume = "82",

pages = "589--591",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Strain-induced growth of SiO2 dots by liquid phase deposition

AU - Liu, C. W.

AU - Hsu, B. C.

AU - Chen, K. F.

AU - Lee, M. H.

AU - Shie, C. R.

AU - Chen, Pang Shiu

PY - 2003/1/27

Y1 - 2003/1/27

N2 - Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

AB - Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

UR - http://www.scopus.com/inward/record.url?scp=0037468003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037468003&partnerID=8YFLogxK

U2 - 10.1063/1.1542682

DO - 10.1063/1.1542682

M3 - Article

AN - SCOPUS:0037468003

SN - 0003-6951

VL - 82

SP - 589

EP - 591

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Strain-induced growth of SiO₂ dots by liquid phase deposition

Abstract

ASJC Scopus subject areas

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