Strain-induced growth of SiO2 dots by liquid phase deposition

C. W. Liu*, B. C. Hsu, K. F. Chen, M. H. Lee, C. R. Shie, Pang Shiu Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

Original languageEnglish
Pages (from-to)589-591
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2003 Jan 27
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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