Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)