Steep switching of In0.18 Al0.82 N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications

Pin Guang Chen, Kuan Ting Chen, Ming Tang, Zheng Ying Wang, Yu Chen Chou, Min Hung Lee*

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Steep switching of In0.18 Al0.82 N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications'. Together they form a unique fingerprint.

INIS

Material Science

Engineering