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Steep switching of In0.18 Al0.82 N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications

  • Pin Guang Chen
  • , Kuan Ting Chen
  • , Ming Tang
  • , Zheng Ying Wang
  • , Yu Chen Chou
  • , Min Hung Lee*
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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