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Steep switch-off of In
0.18
Al
0.82
N/AlN/GaN on Si MIS-HEMT
P. G. Chen
, Y. C. Chou
, S. S. Gu
, R. C. Hong
, Z. Y. Wang
, S. Y. Chen
, C. Y. Liao
, M. Tang
, M. H. Liao
,
M. H. Lee
*
*
Corresponding author for this work
Institute and Undergraduate Program of Electro-Optical Engineering
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:
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0.18
Al
0.82
N/AlN/GaN on Si MIS-HEMT'. Together they form a unique fingerprint.
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INIS
barriers
100%
switches
100%
gallium nitrides
100%
aluminium nitrides
100%
resolution
50%
space
50%
charges
50%
relaxation
50%
mapping
50%
x-ray diffraction
50%
epitaxy
50%
indium
50%
Engineering
Subthreshold Slope
100%
High Resolution
100%
X Ray Diffraction
100%
Reciprocal Space
100%
Material Science
Epitaxy
100%
Indium
100%
Aluminum Nitride
100%
High Resolution X-Ray Diffraction
100%
Earth and Planetary Sciences
Indium
100%
Management Information System
100%
High Resolution X-Ray Diffraction
100%
Physics
Management Information System
100%