Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT

P. G. Chen; Y. C. Chou; S. S. Gu; R. C. Hong; Z. Y. Wang; S. Y. Chen; C. Y. Liao; M. Tang; M. H. Liao; M. H. Lee

doi:10.1109/ISNE.2018.8394720

Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT

P. G. Chen, Y. C. Chou, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, M. Tang, M. H. Liao, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.

Original language	English
Title of host publication	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538614457
DOIs	https://doi.org/10.1109/ISNE.2018.8394720
Publication status	Published - 2018 Jun 22
Event	7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan Duration: 2018 May 7 → 2018 May 9

Publication series

Name	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Conference

Conference	7th International Symposium on Next-Generation Electronics, ISNE 2018
Country/Territory	Taiwan
City	Taipei
Period	2018/05/07 → 2018/05/09

Keywords

InAlN
high-electron-mobility transistor (HEMT)
swing
wafer-scale

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/ISNE.2018.8394720

Cite this

Chen, P. G., Chou, Y. C., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Tang, M., Liao, M. H., & Lee, M. H. (2018). Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394720

Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT. / Chen, P. G.; Chou, Y. C.; Gu, S. S. et al.
Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, PG, Chou, YC, Gu, SS, Hong, RC, Wang, ZY, Chen, SY, Liao, CY, Tang, M, Liao, MH & Lee, MH 2018, Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT. in Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 2018/05/07. https://doi.org/10.1109/ISNE.2018.8394720

Chen PG, Chou YC, Gu SS, Hong RC, Wang ZY, Chen SY et al. Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). doi: 10.1109/ISNE.2018.8394720

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abstract = "InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.",

keywords = "InAlN, high-electron-mobility transistor (HEMT), swing, wafer-scale",

author = "Chen, {P. G.} and Chou, {Y. C.} and Gu, {S. S.} and Hong, {R. C.} and Wang, {Z. Y.} and Chen, {S. Y.} and Liao, {C. Y.} and M. Tang and Liao, {M. H.} and Lee, {M. H.}",

note = "Funding Information: ACKNOWLEDGMENT The authors are grateful for the funding support from the National Science Council (MOST 105-2628-E-003-002-MY3, 106-2221-E-003 -029 -MY3, & 106-2622-8-002 -001) and the processing support by the National Nano Device Laboratories (NDL) and Nano Facility Center (NFC), Taiwan, as well as discussions of technology with Dr. C. Y. Tsai, TSMC, Hsinchu, Taiwan. Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",

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AU - Chen, P. G.

AU - Chou, Y. C.

AU - Gu, S. S.

AU - Hong, R. C.

AU - Wang, Z. Y.

AU - Chen, S. Y.

AU - Liao, C. Y.

AU - Tang, M.

AU - Liao, M. H.

AU - Lee, M. H.

N1 - Funding Information: ACKNOWLEDGMENT The authors are grateful for the funding support from the National Science Council (MOST 105-2628-E-003-002-MY3, 106-2221-E-003 -029 -MY3, & 106-2622-8-002 -001) and the processing support by the National Nano Device Laboratories (NDL) and Nano Facility Center (NFC), Taiwan, as well as discussions of technology with Dr. C. Y. Tsai, TSMC, Hsinchu, Taiwan. Publisher Copyright: © 2018 IEEE.

PY - 2018/6/22

Y1 - 2018/6/22

N2 - InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.

AB - InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.

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