Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT

P. G. Chen; Y. C. Chou; S. S. Gu; R. C. Hong; Z. Y. Wang; S. Y. Chen; C. Y. Liao; M. Tang; M. H. Liao; M. H. Lee

doi:10.1109/ISNE.2018.8394720

Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT

P. G. Chen, Y. C. Chou, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, M. Tang, M. H. Liao, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.

Original language	English
Title of host publication	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538614457
DOIs	https://doi.org/10.1109/ISNE.2018.8394720
Publication status	Published - 2018 Jun 22
Event	7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan Duration: 2018 May 7 → 2018 May 9

Publication series

Name	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Conference

Conference	7th International Symposium on Next-Generation Electronics, ISNE 2018
Country/Territory	Taiwan
City	Taipei
Period	2018/05/07 → 2018/05/09

Keywords

InAlN
high-electron-mobility transistor (HEMT)
swing
wafer-scale

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/ISNE.2018.8394720

Cite this

Chen, P. G., Chou, Y. C., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Tang, M., Liao, M. H., & Lee, M. H. (2018). Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394720

Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT. / Chen, P. G.; Chou, Y. C.; Gu, S. S. et al.
Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, PG, Chou, YC, Gu, SS, Hong, RC, Wang, ZY, Chen, SY, Liao, CY, Tang, M, Liao, MH & Lee, MH 2018, Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT. in Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 2018/05/07. https://doi.org/10.1109/ISNE.2018.8394720

Chen PG, Chou YC, Gu SS, Hong RC, Wang ZY, Chen SY et al. Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). doi: 10.1109/ISNE.2018.8394720

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title = "Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT",

abstract = "InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.",

keywords = "InAlN, high-electron-mobility transistor (HEMT), swing, wafer-scale",

author = "Chen, {P. G.} and Chou, {Y. C.} and Gu, {S. S.} and Hong, {R. C.} and Wang, {Z. Y.} and Chen, {S. Y.} and Liao, {C. Y.} and M. Tang and Liao, {M. H.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",

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doi = "10.1109/ISNE.2018.8394720",

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AU - Chen, P. G.

AU - Chou, Y. C.

AU - Gu, S. S.

AU - Hong, R. C.

AU - Wang, Z. Y.

AU - Chen, S. Y.

AU - Liao, C. Y.

AU - Tang, M.

AU - Liao, M. H.

AU - Lee, M. H.

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AB - InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.

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