Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT

P. G. Chen, Y. C. Chou, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, M. Tang, M. H. Liao, M. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538614457
DOIs
Publication statusPublished - 2018 Jun 22
Externally publishedYes
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: 2018 May 72018 May 9

Publication series

NameProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Conference

Conference7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period18/5/718/5/9

Keywords

  • high-electron-mobility transistor (HEMT)
  • InAlN
  • swing
  • wafer-scale

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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  • Cite this

    Chen, P. G., Chou, Y. C., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Tang, M., Liao, M. H., & Lee, M. H. (2018). Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394720