Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee; Y. T. Wei; K. Y. Chu; J. J. Huang; C. W. Chen; C. C. Cheng; M. J. Chen; H. Y. Lee; Y. S. Chen; L. H. Lee; M. J. Tsai

doi:10.1109/LED.2015.2402517

Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee
, Y. T. Wei
, K. Y. Chu
, J. J. Huang
, C. W. Chen
, C. C. Cheng
, M. J. Chen
, H. Y. Lee
, Y. S. Chen
, L. H. Lee
, M. J. Tsai

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

144 Citations (Scopus)

Abstract

The antiferroelectricity in HfZrO₂ (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SS_min=23 mV/dec and SS _avg=50 mV/dec over 4 decades of I_DS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

Original language	English
Article number	7038127
Pages (from-to)	294-296
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	4
DOIs	https://doi.org/10.1109/LED.2015.2402517
Publication status	Published - 2015 Apr 1

Keywords

ferroelectric
negative capacitance
subthreshold swing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2015.2402517

Cite this

@article{dcf9aa6fe6674cbb83da83edbbcc6f27,

title = "Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics",

abstract = "The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.",

keywords = "ferroelectric, negative capacitance, subthreshold swing",

author = "Lee, \{M. H.\} and Wei, \{Y. T.\} and Chu, \{K. Y.\} and Huang, \{J. J.\} and Chen, \{C. W.\} and Cheng, \{C. C.\} and Chen, \{M. J.\} and Lee, \{H. Y.\} and Chen, \{Y. S.\} and Lee, \{L. H.\} and Tsai, \{M. J.\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2015",

month = apr,

day = "1",

doi = "10.1109/LED.2015.2402517",

language = "English",

volume = "36",

pages = "294--296",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

AU - Lee, M. H.

AU - Wei, Y. T.

AU - Chu, K. Y.

AU - Huang, J. J.

AU - Chen, C. W.

AU - Cheng, C. C.

AU - Chen, M. J.

AU - Lee, H. Y.

AU - Chen, Y. S.

AU - Lee, L. H.

AU - Tsai, M. J.

PY - 2015/4/1

Y1 - 2015/4/1

N2 - The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

AB - The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

KW - ferroelectric

KW - negative capacitance

KW - subthreshold swing

UR - https://www.scopus.com/pages/publications/84961291676

UR - https://www.scopus.com/pages/publications/84961291676#tab=citedBy

U2 - 10.1109/LED.2015.2402517

DO - 10.1109/LED.2015.2402517

M3 - Article

AN - SCOPUS:84961291676

SN - 0741-3106

VL - 36

SP - 294

EP - 296

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 7038127

ER -

Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

Abstract

Keywords

ASJC Scopus subject areas

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