Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee; Y. T. Wei; K. Y. Chu; J. J. Huang; C. W. Chen; C. C. Cheng; M. J. Chen; H. Y. Lee; Y. S. Chen; L. H. Lee; M. J. Tsai

doi:10.1109/LED.2015.2402517

Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee, Y. T. Wei, K. Y. Chu, J. J. Huang, C. W. Chen, C. C. Cheng, M. J. Chen, H. Y. Lee, Y. S. Chen, L. H. Lee, M. J. Tsai

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

142 Citations (Scopus)

Abstract

The antiferroelectricity in HfZrO₂ (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SS_min=23 mV/dec and SS _avg=50 mV/dec over 4 decades of I_DS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

Original language	English
Article number	7038127
Pages (from-to)	294-296
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	4
DOIs	https://doi.org/10.1109/LED.2015.2402517
Publication status	Published - 2015 Apr 1

Keywords

ferroelectric
negative capacitance
subthreshold swing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2015.2402517

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title = "Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics",

abstract = "The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.",

keywords = "ferroelectric, negative capacitance, subthreshold swing",

author = "Lee, {M. H.} and Wei, {Y. T.} and Chu, {K. Y.} and Huang, {J. J.} and Chen, {C. W.} and Cheng, {C. C.} and Chen, {M. J.} and Lee, {H. Y.} and Chen, {Y. S.} and Lee, {L. H.} and Tsai, {M. J.}",

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doi = "10.1109/LED.2015.2402517",

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T1 - Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

AU - Lee, M. H.

AU - Wei, Y. T.

AU - Chu, K. Y.

AU - Huang, J. J.

AU - Chen, C. W.

AU - Cheng, C. C.

AU - Chen, M. J.

AU - Lee, H. Y.

AU - Chen, Y. S.

AU - Lee, L. H.

AU - Tsai, M. J.

PY - 2015/4/1

Y1 - 2015/4/1

N2 - The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

AB - The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

KW - ferroelectric

KW - negative capacitance

KW - subthreshold swing

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SP - 294

EP - 296

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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M1 - 7038127

ER -

Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

Abstract

Keywords

ASJC Scopus subject areas

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