Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee, Y. T. Wei, K. Y. Chu, J. J. Huang, C. W. Chen, C. C. Cheng, M. J. Chen, H. Y. Lee, Y. S. Chen, L. H. Lee, M. J. Tsai

    Research output: Contribution to journalArticlepeer-review

    92 Citations (Scopus)

    Abstract

    The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

    Original languageEnglish
    Article number7038127
    Pages (from-to)294-296
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume36
    Issue number4
    DOIs
    Publication statusPublished - 2015 Apr 1

    Keywords

    • ferroelectric
    • negative capacitance
    • subthreshold swing

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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