Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee, Y. T. Wei, K. Y. Chu, J. J. Huang, C. W. Chen, C. C. Cheng, M. J. Chen, H. Y. Lee, Y. S. Chen, L. H. Lee, M. J. Tsai

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92 Citations (Scopus)

Abstract

The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

Original languageEnglish
Article number7038127
Pages (from-to)294-296
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number4
DOIs
Publication statusPublished - 2015 Apr 1

Keywords

  • ferroelectric
  • negative capacitance
  • subthreshold swing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lee, M. H., Wei, Y. T., Chu, K. Y., Huang, J. J., Chen, C. W., Cheng, C. C., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H., & Tsai, M. J. (2015). Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics. IEEE Electron Device Letters, 36(4), 294-296. [7038127]. https://doi.org/10.1109/LED.2015.2402517