Stacking fault induced tunnel barrier in platelet graphite nanofiber

Yann Wen Lan; Wen Hao Chang; Yuan Yao Li; Yuan Chih Chang; Chia Seng Chang; Chii Dong Chen

doi:10.1063/1.4895787

Stacking fault induced tunnel barrier in platelet graphite nanofiber

Yann Wen Lan^*, Wen Hao Chang, Yuan Yao Li, Yuan Chih Chang, Chia Seng Chang, Chii Dong Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

Original language	English
Article number	103505
Journal	Applied Physics Letters
Volume	105
Issue number	10
DOIs	https://doi.org/10.1063/1.4895787
Publication status	Published - 2014 Sept 8
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4895787

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title = "Stacking fault induced tunnel barrier in platelet graphite nanofiber",

abstract = "A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.",

author = "Lan, {Yann Wen} and Chang, {Wen Hao} and Li, {Yuan Yao} and Chang, {Yuan Chih} and Chang, {Chia Seng} and Chen, {Chii Dong}",

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doi = "10.1063/1.4895787",

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AU - Lan, Yann Wen

AU - Chang, Wen Hao

AU - Li, Yuan Yao

AU - Chang, Yuan Chih

AU - Chang, Chia Seng

AU - Chen, Chii Dong

PY - 2014/9/8

Y1 - 2014/9/8

N2 - A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

AB - A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

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Stacking fault induced tunnel barrier in platelet graphite nanofiber

Abstract

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