Stacked GeO/ SrTiOx resistive memory with ultralow resistance currents

C. H. Cheng; Albert Chin; F. S. Yeh

doi:10.1063/1.3549689

Stacked GeO/ SrTiO_x resistive memory with ultralow resistance currents

C. H. Cheng
, Albert Chin
, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeO_x on metal-oxide SrTiO _x to form the cost-effective Ni/ GeO_x / SrTiO_x /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 10⁶ cycling endurance are realized.

Original language	English
Article number	052905
Journal	Applied Physics Letters
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.3549689
Publication status	Published - 2011 Jan 31
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3549689

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abstract = "We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiO x to form the cost-effective Ni/ GeOx / SrTiOx /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.",

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Y1 - 2011/1/31

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AB - We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiO x to form the cost-effective Ni/ GeOx / SrTiOx /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.

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Stacked GeO/ SrTiO_x resistive memory with ultralow resistance currents

Abstract

ASJC Scopus subject areas

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