Stacked GeO/ SrTiOx resistive memory with ultralow resistance currents

C. H. Cheng, Albert Chin, F. S. Yeh

    Research output: Contribution to journalArticlepeer-review

    30 Citations (Scopus)

    Abstract

    We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiO x to form the cost-effective Ni/ GeOx / SrTiOx /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.

    Original languageEnglish
    Article number052905
    JournalApplied Physics Letters
    Volume98
    Issue number5
    DOIs
    Publication statusPublished - 2011 Jan 31

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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