Stacked GeO/ SrTiOx resistive memory with ultralow resistance currents

C. H. Cheng, Albert Chin, F. S. Yeh

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We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiO x to form the cost-effective Ni/ GeOx / SrTiOx /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.

Original languageEnglish
Article number052905
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2011 Jan 31


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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