Stacked GeO/ SrTiOx resistive memory with ultralow resistance currents

Chun-Hu Cheng, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiO x to form the cost-effective Ni/ GeOx / SrTiOx /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.

Original languageEnglish
Article number052905
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
Publication statusPublished - 2011 Jan 31

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endurance
random access memory
covalent bonds
metal oxides
costs
cycles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Stacked GeO/ SrTiOx resistive memory with ultralow resistance currents. / Cheng, Chun-Hu; Chin, Albert; Yeh, F. S.

In: Applied Physics Letters, Vol. 98, No. 5, 052905, 31.01.2011.

Research output: Contribution to journalArticle

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