Stable temperature characteristics and suppression of efficiency droop in InGaN green light-emitting diodes using pre-TMIn flow treatment

Ya Ju Lee; Yi Ching Chen; Chia Jung Lee; Chun Mao Cheng; Shih Wei Chen; Tien Chang Lu

doi:10.1109/LPT.2010.2053530

Stable temperature characteristics and suppression of efficiency droop in InGaN green light-emitting diodes using pre-TMIn flow treatment

Ya Ju Lee^*, Yi Ching Chen, Chia Jung Lee, Chun Mao Cheng, Shih Wei Chen, Tien Chang Lu

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient (B = 3.34 × 10^-11 cm³ · s^-1) corresponding to a 9.2% enhancement in the internal quantum efficiency, as well as a significant reduction of leakage paths for injected carriers, was obtained. Most important, the pre-TMIn flow treatment evidently reduces the dependence of the external quantum efficiency on temperature and efficiency droop of green LEDs. The improvement is thought to be attributable to the preferential formation of In-rich dots upon pre-TMIn flow treatment, which effectively suppresses the trapping of excitons by threading dislocations and the overflowing of injected carriers outside the active regions at elevated temperatures.

Original language	English
Article number	5491070
Pages (from-to)	1279-1281
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	17
DOIs	https://doi.org/10.1109/LPT.2010.2053530
Publication status	Published - 2010

Keywords

Efficiency-droop
light-emitting diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2010.2053530

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@article{8435a69914fd46869e2a038ae072bc5f,

title = "Stable temperature characteristics and suppression of efficiency droop in InGaN green light-emitting diodes using pre-TMIn flow treatment",

abstract = "We present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient (B = 3.34 × 10-11 cm3 · s-1) corresponding to a 9.2% enhancement in the internal quantum efficiency, as well as a significant reduction of leakage paths for injected carriers, was obtained. Most important, the pre-TMIn flow treatment evidently reduces the dependence of the external quantum efficiency on temperature and efficiency droop of green LEDs. The improvement is thought to be attributable to the preferential formation of In-rich dots upon pre-TMIn flow treatment, which effectively suppresses the trapping of excitons by threading dislocations and the overflowing of injected carriers outside the active regions at elevated temperatures.",

keywords = "Efficiency-droop, light-emitting diode",

author = "Lee, {Ya Ju} and Chen, {Yi Ching} and Lee, {Chia Jung} and Cheng, {Chun Mao} and Chen, {Shih Wei} and Lu, {Tien Chang}",

note = "Funding Information: Manuscript received April 22, 2010; revised May 21, 2010; accepted June 12, 2010. Date of publication June 21, 2010; date of current version August 06, 2010. This work was supported by the National Science Council of Republic of China (R.O.C.) in Taiwan under Contract NSC–98–2112–M003–001–MY2 and Contract NSC 96-2221-E-009-094-MY3.",

year = "2010",

doi = "10.1109/LPT.2010.2053530",

language = "English",

volume = "22",

pages = "1279--1281",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "17",

}

TY - JOUR

T1 - Stable temperature characteristics and suppression of efficiency droop in InGaN green light-emitting diodes using pre-TMIn flow treatment

AU - Lee, Ya Ju

AU - Chen, Yi Ching

AU - Lee, Chia Jung

AU - Cheng, Chun Mao

AU - Chen, Shih Wei

AU - Lu, Tien Chang

N1 - Funding Information: Manuscript received April 22, 2010; revised May 21, 2010; accepted June 12, 2010. Date of publication June 21, 2010; date of current version August 06, 2010. This work was supported by the National Science Council of Republic of China (R.O.C.) in Taiwan under Contract NSC–98–2112–M003–001–MY2 and Contract NSC 96-2221-E-009-094-MY3.

PY - 2010

Y1 - 2010

N2 - We present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient (B = 3.34 × 10-11 cm3 · s-1) corresponding to a 9.2% enhancement in the internal quantum efficiency, as well as a significant reduction of leakage paths for injected carriers, was obtained. Most important, the pre-TMIn flow treatment evidently reduces the dependence of the external quantum efficiency on temperature and efficiency droop of green LEDs. The improvement is thought to be attributable to the preferential formation of In-rich dots upon pre-TMIn flow treatment, which effectively suppresses the trapping of excitons by threading dislocations and the overflowing of injected carriers outside the active regions at elevated temperatures.

AB - We present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient (B = 3.34 × 10-11 cm3 · s-1) corresponding to a 9.2% enhancement in the internal quantum efficiency, as well as a significant reduction of leakage paths for injected carriers, was obtained. Most important, the pre-TMIn flow treatment evidently reduces the dependence of the external quantum efficiency on temperature and efficiency droop of green LEDs. The improvement is thought to be attributable to the preferential formation of In-rich dots upon pre-TMIn flow treatment, which effectively suppresses the trapping of excitons by threading dislocations and the overflowing of injected carriers outside the active regions at elevated temperatures.

KW - Efficiency-droop

KW - light-emitting diode

UR - http://www.scopus.com/inward/record.url?scp=77955528258&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955528258&partnerID=8YFLogxK

U2 - 10.1109/LPT.2010.2053530

DO - 10.1109/LPT.2010.2053530

M3 - Article

AN - SCOPUS:77955528258

VL - 22

SP - 1279

EP - 1281

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 17

M1 - 5491070

ER -

Stable temperature characteristics and suppression of efficiency droop in InGaN green light-emitting diodes using pre-TMIn flow treatment

Abstract

Keywords

ASJC Scopus subject areas

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