Stable temperature characteristics and suppression of efficiency droop in InGaN green light-emitting diodes using pre-TMIn flow treatment

Ya Ju Lee, Yi Ching Chen, Chia Jung Lee, Chun Mao Cheng, Shih Wei Chen, Tien Chang Lu

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    We present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient (B = 3.34 × 10-11 cm3 · s-1) corresponding to a 9.2% enhancement in the internal quantum efficiency, as well as a significant reduction of leakage paths for injected carriers, was obtained. Most important, the pre-TMIn flow treatment evidently reduces the dependence of the external quantum efficiency on temperature and efficiency droop of green LEDs. The improvement is thought to be attributable to the preferential formation of In-rich dots upon pre-TMIn flow treatment, which effectively suppresses the trapping of excitons by threading dislocations and the overflowing of injected carriers outside the active regions at elevated temperatures.

    Original languageEnglish
    Article number5491070
    Pages (from-to)1279-1281
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume22
    Issue number17
    DOIs
    Publication statusPublished - 2010 Aug 18

    Keywords

    • Efficiency-droop
    • light-emitting diode

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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