Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu; Yi Chun Tung; Chih Yang Tseng; Wei Chun Wang; Hsuan Han Chen; Tsung Ming Lee; Wu Ching Chou; Zhi Wei Zheng; Chun Hu Cheng; Hsiao Hsuan Hsu

doi:10.1149/2.0041910jss

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu
, Yi Chun Tung
, Chih Yang Tseng
, Wei Chun Wang
, Hsuan Han Chen
, Tsung Ming Lee
, Wu Ching Chou
, Zhi Wei Zheng
, Chun Hu Cheng
, Hsiao Hsuan Hsu

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

Original language	English
Pages (from-to)	P553-P556
Journal	ECS Journal of Solid State Science and Technology
Volume	8
Issue number	10
DOIs	https://doi.org/10.1149/2.0041910jss
Publication status	Published - 2019

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0041910jss

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title = "Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering",

abstract = "In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.",

author = "Chien Liu and Tung, \{Yi Chun\} and Tseng, \{Chih Yang\} and Wang, \{Wei Chun\} and Chen, \{Hsuan Han\} and Lee, \{Tsung Ming\} and Chou, \{Wu Ching\} and Zheng, \{Zhi Wei\} and Cheng, \{Chun Hu\} and Hsu, \{Hsiao Hsuan\}",

note = "Publisher Copyright: {\textcopyright} 2019 The Electrochemical Society.",

year = "2019",

doi = "10.1149/2.0041910jss",

language = "English",

volume = "8",

pages = "P553--P556",

journal = "ECS Journal of Solid State Science and Technology",

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publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

AU - Liu, Chien

AU - Tung, Yi Chun

AU - Tseng, Chih Yang

AU - Wang, Wei Chun

AU - Chen, Hsuan Han

AU - Lee, Tsung Ming

AU - Chou, Wu Ching

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Hsu, Hsiao Hsuan

PY - 2019

Y1 - 2019

N2 - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

AB - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

UR - https://www.scopus.com/pages/publications/85073876055

UR - https://www.scopus.com/pages/publications/85073876055#tab=citedBy

U2 - 10.1149/2.0041910jss

DO - 10.1149/2.0041910jss

M3 - Article

AN - SCOPUS:85073876055

SN - 2162-8769

VL - 8

SP - P553-P556

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 10

ER -

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Abstract

ASJC Scopus subject areas

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