Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu; Yi Chun Tung; Chih Yang Tseng; Wei Chun Wang; Hsuan Han Chen; Tsung Ming Lee; Wu Ching Chou; Zhi Wei Zheng; Chun Hu Cheng; Hsiao Hsuan Hsu

doi:10.1149/2.0041910jss

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu, Yi Chun Tung, Chih Yang Tseng, Wei Chun Wang, Hsuan Han Chen, Tsung Ming Lee, Wu Ching Chou, Zhi Wei Zheng, Chun Hu Cheng, Hsiao Hsuan Hsu

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

Original language	English
Pages (from-to)	P553-P556
Journal	ECS Journal of Solid State Science and Technology
Volume	8
Issue number	10
DOIs	https://doi.org/10.1149/2.0041910jss
Publication status	Published - 2019

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0041910jss

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title = "Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering",

abstract = "In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.",

author = "Chien Liu and Tung, {Yi Chun} and Tseng, {Chih Yang} and Wang, {Wei Chun} and Chen, {Hsuan Han} and Lee, {Tsung Ming} and Chou, {Wu Ching} and Zheng, {Zhi Wei} and Cheng, {Chun Hu} and Hsu, {Hsiao Hsuan}",

note = "Publisher Copyright: {\textcopyright} 2019 The Electrochemical Society.",

year = "2019",

doi = "10.1149/2.0041910jss",

language = "English",

volume = "8",

pages = "P553--P556",

journal = "ECS Journal of Solid State Science and Technology",

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TY - JOUR

T1 - Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

AU - Liu, Chien

AU - Tung, Yi Chun

AU - Tseng, Chih Yang

AU - Wang, Wei Chun

AU - Chen, Hsuan Han

AU - Lee, Tsung Ming

AU - Chou, Wu Ching

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Hsu, Hsiao Hsuan

PY - 2019

Y1 - 2019

N2 - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

AB - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

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DO - 10.1149/2.0041910jss

M3 - Article

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SN - 2162-8769

VL - 8

SP - P553-P556

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 10

ER -

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Abstract

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