Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu, Yi Chun Tung, Chih Yang Tseng, Wei Chun Wang, Hsuan Han Chen, Tsung Ming Lee, Wu Ching Chou, Zhi Wei Zheng, Chun Hu Cheng, Hsiao Hsuan Hsu

Research output: Contribution to journalArticle

Abstract

In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

Original languageEnglish
Pages (from-to)P553-P556
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number10
DOIs
Publication statusPublished - 2019 Jan 1

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Hafnium
Aluminum Oxide
Nitrides
Ferroelectric materials
Metals
Aluminum
Electrodes
Oxides
Tantalum
Chemical stability
Leakage currents
Durability
Capacitors
Nitrogen
Data storage equipment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering. / Liu, Chien; Tung, Yi Chun; Tseng, Chih Yang; Wang, Wei Chun; Chen, Hsuan Han; Lee, Tsung Ming; Chou, Wu Ching; Zheng, Zhi Wei; Cheng, Chun Hu; Hsu, Hsiao Hsuan.

In: ECS Journal of Solid State Science and Technology, Vol. 8, No. 10, 01.01.2019, p. P553-P556.

Research output: Contribution to journalArticle

Liu, Chien ; Tung, Yi Chun ; Tseng, Chih Yang ; Wang, Wei Chun ; Chen, Hsuan Han ; Lee, Tsung Ming ; Chou, Wu Ching ; Zheng, Zhi Wei ; Cheng, Chun Hu ; Hsu, Hsiao Hsuan. / Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering. In: ECS Journal of Solid State Science and Technology. 2019 ; Vol. 8, No. 10. pp. P553-P556.
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