Spin-valve transistor with a NP junction

Y. W. Huang*, C. K. Lo, Y. D. Yao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.

Original languageEnglish
Pages (from-to)e279-e281
JournalJournal of Magnetism and Magnetic Materials
Issue number1
Publication statusPublished - 2006 Sept
Externally publishedYes


  • Magneto-current
  • Spin transistor
  • p-n junction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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