Spin-valve transistor with a NP junction

Y. W. Huang; C. K. Lo; Y. D. Yao

doi:10.1016/j.jmmm.2006.02.018

Spin-valve transistor with a NP junction

Y. W. Huang^*, C. K. Lo, Y. D. Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.

Original language	English
Pages (from-to)	e279-e281
Journal	Journal of Magnetism and Magnetic Materials
Volume	304
Issue number	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.02.018
Publication status	Published - 2006 Sept
Externally published	Yes

Keywords

Magneto-current
Spin transistor
p-n junction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.02.018

Cite this

@article{271d7830da894282852f1dc4112d4922,

title = "Spin-valve transistor with a NP junction",

abstract = "A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.",

keywords = "Magneto-current, Spin transistor, p-n junction",

author = "Huang, {Y. W.} and Lo, {C. K.} and Yao, {Y. D.}",

note = "Funding Information: The authors would like to thank the technical support from the Nano Technology Research Center (NTRC), ITRI. This work was supported by the Academia Sinica and the National Science Council of Taiwan under Grants No. NSC93-2112-M-002-031.",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.02.018",

language = "English",

volume = "304",

pages = "e279--e281",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Spin-valve transistor with a NP junction

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

N1 - Funding Information: The authors would like to thank the technical support from the Nano Technology Research Center (NTRC), ITRI. This work was supported by the Academia Sinica and the National Science Council of Taiwan under Grants No. NSC93-2112-M-002-031.

PY - 2006/9

Y1 - 2006/9

N2 - A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.

AB - A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.

KW - Magneto-current

KW - Spin transistor

KW - p-n junction

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U2 - 10.1016/j.jmmm.2006.02.018

DO - 10.1016/j.jmmm.2006.02.018

M3 - Article

AN - SCOPUS:33747079602

SN - 0304-8853

VL - 304

SP - e279-e281

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Spin-valve transistor with a NP junction

Abstract

Keywords

ASJC Scopus subject areas

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