A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.
- Spin transistor
- p-n junction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics