Spin-valve transistor

Y. W. Huang*, C. K. Lo, Y. D. Yao, L. C. Hsieh, J. H. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A spin transistor consisting of a metallic pseudo-spin-valve emitter, a copper base, and a p-n junction collector was prepared on a Si(100) wafer. This spin transistor can provide high magnetocurrent output, high magnetocurrent variation, and high transfer ratio. The common collector configuration with an emitter bias of 5.12 V at 77 K gives a large magnetocurrent variation of more than 95.5 μA in the collector, and the change is more than 3400% with a transfer ratio of 2.59× 10-3. At room temperature, these changes go down to 98.3 μA and 55.3%, respectively, and the transfer ratio rises to 5.98× 10-3. The high performance of this spin-valve transistor is due to the use of a p-n junction as an energy barrier to select spin electrons.

Original languageEnglish
Article number10D504
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 2005 May 15
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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