Spin-valve transistor

Y. W. Huang, Chi-Kuen Lo, Y. D. Yao, L. C. Hsieh, J. H. Huang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A spin transistor consisting of a metallic pseudo-spin-valve emitter, a copper base, and a p-n junction collector was prepared on a Si(100) wafer. This spin transistor can provide high magnetocurrent output, high magnetocurrent variation, and high transfer ratio. The common collector configuration with an emitter bias of 5.12 V at 77 K gives a large magnetocurrent variation of more than 95.5 μA in the collector, and the change is more than 3400% with a transfer ratio of 2.59× 10-3. At room temperature, these changes go down to 98.3 μA and 55.3%, respectively, and the transfer ratio rises to 5.98× 10-3. The high performance of this spin-valve transistor is due to the use of a p-n junction as an energy barrier to select spin electrons.

Original languageEnglish
Article number10D504
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - 2005 May 15

Fingerprint

transistors
accumulators
p-n junctions
emitters
electron spin
wafers
copper
output
room temperature
configurations
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Huang, Y. W., Lo, C-K., Yao, Y. D., Hsieh, L. C., & Huang, J. H. (2005). Spin-valve transistor. Journal of Applied Physics, 97(10), [10D504]. https://doi.org/10.1063/1.1852318

Spin-valve transistor. / Huang, Y. W.; Lo, Chi-Kuen; Yao, Y. D.; Hsieh, L. C.; Huang, J. H.

In: Journal of Applied Physics, Vol. 97, No. 10, 10D504, 15.05.2005.

Research output: Contribution to journalArticle

Huang, YW, Lo, C-K, Yao, YD, Hsieh, LC & Huang, JH 2005, 'Spin-valve transistor', Journal of Applied Physics, vol. 97, no. 10, 10D504. https://doi.org/10.1063/1.1852318
Huang YW, Lo C-K, Yao YD, Hsieh LC, Huang JH. Spin-valve transistor. Journal of Applied Physics. 2005 May 15;97(10). 10D504. https://doi.org/10.1063/1.1852318
Huang, Y. W. ; Lo, Chi-Kuen ; Yao, Y. D. ; Hsieh, L. C. ; Huang, J. H. / Spin-valve transistor. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 10.
@article{77ca9df1c42f409b9a3f29e1b85dc1a3,
title = "Spin-valve transistor",
abstract = "A spin transistor consisting of a metallic pseudo-spin-valve emitter, a copper base, and a p-n junction collector was prepared on a Si(100) wafer. This spin transistor can provide high magnetocurrent output, high magnetocurrent variation, and high transfer ratio. The common collector configuration with an emitter bias of 5.12 V at 77 K gives a large magnetocurrent variation of more than 95.5 μA in the collector, and the change is more than 3400{\%} with a transfer ratio of 2.59× 10-3. At room temperature, these changes go down to 98.3 μA and 55.3{\%}, respectively, and the transfer ratio rises to 5.98× 10-3. The high performance of this spin-valve transistor is due to the use of a p-n junction as an energy barrier to select spin electrons.",
author = "Huang, {Y. W.} and Chi-Kuen Lo and Yao, {Y. D.} and Hsieh, {L. C.} and Huang, {J. H.}",
year = "2005",
month = "5",
day = "15",
doi = "10.1063/1.1852318",
language = "English",
volume = "97",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Spin-valve transistor

AU - Huang, Y. W.

AU - Lo, Chi-Kuen

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Huang, J. H.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - A spin transistor consisting of a metallic pseudo-spin-valve emitter, a copper base, and a p-n junction collector was prepared on a Si(100) wafer. This spin transistor can provide high magnetocurrent output, high magnetocurrent variation, and high transfer ratio. The common collector configuration with an emitter bias of 5.12 V at 77 K gives a large magnetocurrent variation of more than 95.5 μA in the collector, and the change is more than 3400% with a transfer ratio of 2.59× 10-3. At room temperature, these changes go down to 98.3 μA and 55.3%, respectively, and the transfer ratio rises to 5.98× 10-3. The high performance of this spin-valve transistor is due to the use of a p-n junction as an energy barrier to select spin electrons.

AB - A spin transistor consisting of a metallic pseudo-spin-valve emitter, a copper base, and a p-n junction collector was prepared on a Si(100) wafer. This spin transistor can provide high magnetocurrent output, high magnetocurrent variation, and high transfer ratio. The common collector configuration with an emitter bias of 5.12 V at 77 K gives a large magnetocurrent variation of more than 95.5 μA in the collector, and the change is more than 3400% with a transfer ratio of 2.59× 10-3. At room temperature, these changes go down to 98.3 μA and 55.3%, respectively, and the transfer ratio rises to 5.98× 10-3. The high performance of this spin-valve transistor is due to the use of a p-n junction as an energy barrier to select spin electrons.

UR - http://www.scopus.com/inward/record.url?scp=20944436653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20944436653&partnerID=8YFLogxK

U2 - 10.1063/1.1852318

DO - 10.1063/1.1852318

M3 - Article

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 10D504

ER -