Spin transistor for magnetic recording

C. K. Lo; Y. W. Huang; Y. D. Yao; D. R. Huang; J. H. Huang

doi:10.1109/TMAG.2004.842081

Spin transistor for magnetic recording

C. K. Lo^*, Y. W. Huang, Y. D. Yao, D. R. Huang, J. H. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This kind of spin device is based on the technologies of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects together with a p-n junction. The junction is used as a potential barrier to select spin electrons. In case of GMRST the collector current, I_C, varies from 464 μA at magnetically parallel state to 309 μA at magnetically antiparallel state and gives a percentage change of about 50% at room temperature. As for the MTRST, the change of I_C is about 45% at room temperature with current varying from 2.9 to 4.2 μA. Memory effect, which is the intrinsic behavior of magnetic materials, is also demonstrated.

Original language	English
Pages (from-to)	892-895
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	2
DOIs	https://doi.org/10.1109/TMAG.2004.842081
Publication status	Published - 2005 Feb
Externally published	Yes

Keywords

Magnetoresistance
Spin transistor
Spin tunneling
p-n junction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2004.842081

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@article{2993a3c7d0fe40be88889b7933dc4e22,

title = "Spin transistor for magnetic recording",

abstract = "In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This kind of spin device is based on the technologies of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects together with a p-n junction. The junction is used as a potential barrier to select spin electrons. In case of GMRST the collector current, IC, varies from 464 μA at magnetically parallel state to 309 μA at magnetically antiparallel state and gives a percentage change of about 50% at room temperature. As for the MTRST, the change of IC is about 45% at room temperature with current varying from 2.9 to 4.2 μA. Memory effect, which is the intrinsic behavior of magnetic materials, is also demonstrated.",

keywords = "Magnetoresistance, Spin transistor, Spin tunneling, p-n junction",

author = "Lo, {C. K.} and Huang, {Y. W.} and Yao, {Y. D.} and Huang, {D. R.} and Huang, {J. H.}",

note = "Funding Information: The authors would like to acknowledge technical support from the Nano Technology Research Center, ITRI. Funding Information: Manuscript received September 24, 2004. This work was supported by the R.O.C. Ministry of Economic Affairs under Grant A331XS3710 and by the National Science Council under Grant 91-2112-M-006-029.",

year = "2005",

month = feb,

doi = "10.1109/TMAG.2004.842081",

language = "English",

volume = "41",

pages = "892--895",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Spin transistor for magnetic recording

AU - Lo, C. K.

AU - Huang, Y. W.

AU - Yao, Y. D.

AU - Huang, D. R.

AU - Huang, J. H.

N1 - Funding Information: The authors would like to acknowledge technical support from the Nano Technology Research Center, ITRI. Funding Information: Manuscript received September 24, 2004. This work was supported by the R.O.C. Ministry of Economic Affairs under Grant A331XS3710 and by the National Science Council under Grant 91-2112-M-006-029.

PY - 2005/2

Y1 - 2005/2

N2 - In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This kind of spin device is based on the technologies of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects together with a p-n junction. The junction is used as a potential barrier to select spin electrons. In case of GMRST the collector current, IC, varies from 464 μA at magnetically parallel state to 309 μA at magnetically antiparallel state and gives a percentage change of about 50% at room temperature. As for the MTRST, the change of IC is about 45% at room temperature with current varying from 2.9 to 4.2 μA. Memory effect, which is the intrinsic behavior of magnetic materials, is also demonstrated.

AB - In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This kind of spin device is based on the technologies of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects together with a p-n junction. The junction is used as a potential barrier to select spin electrons. In case of GMRST the collector current, IC, varies from 464 μA at magnetically parallel state to 309 μA at magnetically antiparallel state and gives a percentage change of about 50% at room temperature. As for the MTRST, the change of IC is about 45% at room temperature with current varying from 2.9 to 4.2 μA. Memory effect, which is the intrinsic behavior of magnetic materials, is also demonstrated.

KW - Magnetoresistance

KW - Spin transistor

KW - Spin tunneling

KW - p-n junction

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

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ER -

Spin transistor for magnetic recording

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Keywords

ASJC Scopus subject areas

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