Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts

  • N. C. Gerhardt*
  • , S. Hövel
  • , C. Brenner
  • , M. R. Hofmann
  • , F. Y. Lo
  • , D. Reuter
  • , A. D. Wieck
  • , E. Schuster
  • , W. Keune
  • , S. Halm
  • , G. Bacher
  • , K. Westerholt
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We analyze the electrical injection of spin-polarized electrons into a (GaIn) AsGaAs light-emitting diode. Using an FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we demonstrate spin injection even in remanence between 90 and 260 K. The maximum degree of circular polarization of the emitted light is 0.75% at 90 K.

Original languageEnglish
Article number073907
JournalJournal of Applied Physics
Volume99
Issue number7
DOIs
Publication statusPublished - 2006 Apr
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

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