Abstract
We analyze the electrical injection of spin-polarized electrons into a (GaIn) AsGaAs light-emitting diode. Using an FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we demonstrate spin injection even in remanence between 90 and 260 K. The maximum degree of circular polarization of the emitted light is 0.75% at 90 K.
| Original language | English |
|---|---|
| Article number | 073907 |
| Journal | Journal of Applied Physics |
| Volume | 99 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2006 Apr |
| Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy
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