Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts

N. C. Gerhardt*, S. Hövel, C. Brenner, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, S. Halm, G. Bacher, K. Westerholt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We analyze the electrical injection of spin-polarized electrons into a (GaIn) AsGaAs light-emitting diode. Using an FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we demonstrate spin injection even in remanence between 90 and 260 K. The maximum degree of circular polarization of the emitted light is 0.75% at 90 K.

Original languageEnglish
Article number073907
JournalJournal of Applied Physics
Volume99
Issue number7
DOIs
Publication statusPublished - 2006 Apr
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

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