Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts

N. C. Gerhardt, S. Hövel, C. Brenner, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, S. Halm, G. Bacher, K. Westerholt

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Abstract

We analyze the electrical injection of spin-polarized electrons into a (GaIn) AsGaAs light-emitting diode. Using an FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we demonstrate spin injection even in remanence between 90 and 260 K. The maximum degree of circular polarization of the emitted light is 0.75% at 90 K.

Original languageEnglish
Article number073907
JournalJournal of Applied Physics
Volume99
Issue number7
DOIs
Publication statusPublished - 2006 Apr 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F. Y., Reuter, D., Wieck, A. D., Schuster, E., Keune, W., Halm, S., Bacher, G., & Westerholt, K. (2006). Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts. Journal of Applied Physics, 99(7), [073907]. https://doi.org/10.1063/1.2186376