Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Ya Ju Lee, Zu Po Yang, Fang Yuh Lo, Jhih Jhong Siao, Zhong Han Xie, Yi Lun Chuang, Tai Yuan Lin, Jinn Kong Sheu

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Abstract

High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

Original languageEnglish
Article number056101
JournalAPL Materials
Volume2
Issue number5
DOIs
Publication statusPublished - 2014 May

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ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Lee, Y. J., Yang, Z. P., Lo, F. Y., Siao, J. J., Xie, Z. H., Chuang, Y. L., Lin, T. Y., & Sheu, J. K. (2014). Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition. APL Materials, 2(5), [056101]. https://doi.org/10.1063/1.4874455