Slanted n-ZnO nanorod arrays/p-GaN lightemitting diodes with strong ultraviolet emissions

Zu Po Yang, Zhong Han Xie, Chia Ching Lin, Ya Ju Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Both of oblique angle deposition and conventional deposition techniques were used by a RF sputtering system to grow the slanted (ß = 32°) and planar (ß = 0°) n-ZnO films on p-GaN, respectively. These two kinds of n-ZnO/p-GaN heterojunctions were then fabricated the lightemitting diodes (LEDs). The electrical and optical properties of these two kinds of LEDs were investigated systematically. The results show that the slanted n-ZnO/p-GaN LEDs have a lower turn-on voltage and less leakage current than that of planar n-ZnO/p-GaN LEDs. Moreover, different from the planar n-ZnO/p-GaN LEDs which emitting colors changes with injection current, the slanted n-ZnO/p-GaN LEDs retains UV emissions (385-400 nm) under the entire range of injection currents we applied. The dominant UV luminescence of slanted n-ZnO/p-GaN LEDs is attributed to the ZnO near band edge transitions, indicating the high quality of slanted ZnO films and exhibiting the essential property dedicated to nano-sized heterojunctions. Hence, we have demonstrated that the slanted n-ZnO/p-GaN LEDs fabricated by oblique angle deposition have better performance than the planar n-ZnO/p-GaN LEDs fabricated by convention deposition means.

Original languageEnglish
Pages (from-to)399-407
Number of pages9
JournalOptical Materials Express
Issue number2
Publication statusPublished - 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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