Abstract
We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.
| Original language | English |
|---|---|
| Title of host publication | Physics and Technology of High-k Materials 9 |
| Pages | 121-132 |
| Number of pages | 12 |
| Edition | 3 |
| DOIs | |
| Publication status | Published - 2011 Dec 1 |
| Event | 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 10 → 2011 Oct 12 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 3 |
| Volume | 41 |
| ISSN (Print) | 1938-5862 |
| ISSN (Electronic) | 1938-6737 |
Other
| Other | 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/10/10 → 11/10/12 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Size-dependent trapping effect in nano-dot non-volatile memory. / Tsai, C. Y.; Cheng, Chun-Hu; Chang, T. Y.; Chou, K. Y.; Chin, Albert; Yeh, F. S.
Physics and Technology of High-k Materials 9. 3. ed. 2011. p. 121-132 (ECS Transactions; Vol. 41, No. 3).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Size-dependent trapping effect in nano-dot non-volatile memory
AU - Tsai, C. Y.
AU - Cheng, Chun-Hu
AU - Chang, T. Y.
AU - Chou, K. Y.
AU - Chin, Albert
AU - Yeh, F. S.
PY - 2011/12/1
Y1 - 2011/12/1
N2 - We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.
AB - We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.
UR - http://www.scopus.com/inward/record.url?scp=84857279886&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84857279886&partnerID=8YFLogxK
U2 - 10.1149/1.3633028
DO - 10.1149/1.3633028
M3 - Conference contribution
SN - 9781566779036
T3 - ECS Transactions
SP - 121
EP - 132
BT - Physics and Technology of High-k Materials 9
ER -