Size-dependent trapping effect in nano-dot non-volatile memory

C. Y. Tsai, Chun-Hu Cheng, T. Y. Chang, K. Y. Chou, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages121-132
Number of pages12
Edition3
DOIs
Publication statusPublished - 2011 Dec 1
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 102011 Oct 12

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/1011/10/12

Fingerprint

Charge trapping
Flash memory
Durability
Data storage equipment
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tsai, C. Y., Cheng, C-H., Chang, T. Y., Chou, K. Y., Chin, A., & Yeh, F. S. (2011). Size-dependent trapping effect in nano-dot non-volatile memory. In Physics and Technology of High-k Materials 9 (3 ed., pp. 121-132). (ECS Transactions; Vol. 41, No. 3). https://doi.org/10.1149/1.3633028

Size-dependent trapping effect in nano-dot non-volatile memory. / Tsai, C. Y.; Cheng, Chun-Hu; Chang, T. Y.; Chou, K. Y.; Chin, Albert; Yeh, F. S.

Physics and Technology of High-k Materials 9. 3. ed. 2011. p. 121-132 (ECS Transactions; Vol. 41, No. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsai, CY, Cheng, C-H, Chang, TY, Chou, KY, Chin, A & Yeh, FS 2011, Size-dependent trapping effect in nano-dot non-volatile memory. in Physics and Technology of High-k Materials 9. 3 edn, ECS Transactions, no. 3, vol. 41, pp. 121-132, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, United States, 11/10/10. https://doi.org/10.1149/1.3633028
Tsai CY, Cheng C-H, Chang TY, Chou KY, Chin A, Yeh FS. Size-dependent trapping effect in nano-dot non-volatile memory. In Physics and Technology of High-k Materials 9. 3 ed. 2011. p. 121-132. (ECS Transactions; 3). https://doi.org/10.1149/1.3633028
Tsai, C. Y. ; Cheng, Chun-Hu ; Chang, T. Y. ; Chou, K. Y. ; Chin, Albert ; Yeh, F. S. / Size-dependent trapping effect in nano-dot non-volatile memory. Physics and Technology of High-k Materials 9. 3. ed. 2011. pp. 121-132 (ECS Transactions; 3).
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