Size-dependent trapping effect in nano-dot non-volatile memory

C. Y. Tsai; C. H. Cheng; T. Y. Chang; K. Y. Chou; Albert Chin; F. S. Yeh

doi:10.1149/1.3633028

Size-dependent trapping effect in nano-dot non-volatile memory

C. Y. Tsai, C. H. Cheng, T. Y. Chang, K. Y. Chou, Albert Chin, F. S. Yeh

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As ⁺ implantation to improve the device performance of MONOS CTF device. The TaN-[SiO ₂-LaAlO ₃]-[As ⁺-implanted ZrON]-[LaAlO ₃-SiO ₂]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 ⁵ cycles under fast 100 μs and low ±16 V program/erase. The performance of As ⁺-implanted ZrON is significantly better than that of stacked Si ₃N ₄/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.

Original language	English
Title of host publication	Physics and Technology of High-k Materials 9
Pages	121-132
Number of pages	12
Edition	3
DOIs	https://doi.org/10.1149/1.3633028
Publication status	Published - 2011 Dec 1
Event	9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 10 → 2011 Oct 12

Publication series

Name	ECS Transactions
Number	3
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
Country	United States
City	Boston, MA
Period	11/10/10 → 11/10/12

ASJC Scopus subject areas

Engineering(all)

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Cite this

Tsai, C. Y., Cheng, C. H., Chang, T. Y., Chou, K. Y., Chin, A., & Yeh, F. S. (2011). Size-dependent trapping effect in nano-dot non-volatile memory. In Physics and Technology of High-k Materials 9 (3 ed., pp. 121-132). (ECS Transactions; Vol. 41, No. 3). https://doi.org/10.1149/1.3633028

Tsai, CY, Cheng, CH, Chang, TY, Chou, KY, Chin, A & Yeh, FS 2011, Size-dependent trapping effect in nano-dot non-volatile memory. in Physics and Technology of High-k Materials 9. 3 edn, ECS Transactions, no. 3, vol. 41, pp. 121-132, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, United States, 11/10/10. https://doi.org/10.1149/1.3633028

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abstract = "We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.",

author = "Tsai, {C. Y.} and Cheng, {C. H.} and Chang, {T. Y.} and Chou, {K. Y.} and Albert Chin and Yeh, {F. S.}",

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AU - Yeh, F. S.

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AB - We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.

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