@inproceedings{170e844843e948348bf693c634692741,
title = "Single-electron transistor using self-aligned sidewall spacer gates on silicon-on-insulator nanowire",
abstract = "A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturized to smaller than the state-of-the-art feature size, through a combination of electron beam lithography, oxidation and polysilicon sidewall spacer gate formation processes. The device shows typical MOSFET I-V characteristics at room temperature. However, the Coulomb gap and Coulomb oscillations are clearly observed at 4 K.",
keywords = "Electron beams, Lithography, Nanoscale devices, Oxidation, Quantum dots, Silicon on insulator technology, Single electron transistors, Size control, Temperature, Wires",
author = "Hu, {S. F.} and Wu, {Y. C.} and Sung, {C. L.} and Chang, {C. Y.} and Huang, {T. Y.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 ; Conference date: 12-08-2003 Through 14-08-2003",
year = "2003",
doi = "10.1109/NANO.2003.1230975",
language = "English",
series = "Proceedings of the IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
pages = "573--576",
booktitle = "2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings",
}