Single crystalline silicene consist of various superstructures using a flexible ultrathin Ag(111) template on Si(111)

Hung Chang Hsu, Yi Hung Lu, Tai Lung Su, Wen Chin Lin, Tsu Yi Fu

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Abstract

Using scanning tunneling microscopy, we studied the formation of silicene on an ultrathin Ag(111) film with a thickness of 6-12 monolayers, which was prepared on a Si(111) substrate. A low-energy electron diffraction pattern with an oval spot indicated that the ultrathin Ag(111) film is more disordered than the single-crystal Ag(111). After Si epitaxy growth, we still measured the classical 4 ×4, √13 ×√13, and 2√3 ×2√3 silicene superstructures, which are the same as the silicene superstructure on single-crystal Ag(111). Growing silicene on a single-crystal Ag(111) bulk usually results in the formation of a defect boundary due to the inconsistent orientation of various superstructures. By comparing the angles and boundary conditions between various silicene superstructures on the ultrathin film and single-crystal Ag(111), we discovered that a consistent orientation of various superstructures without obvious boundary defects formed on the ultrathin Ag(111) film. The results indicated single crystalline silicene formation, which was attributed to the domain rotation and lateral shift of the disordered ultrathin Ag(111) film.

Original languageEnglish
Article number075004
JournalSemiconductor Science and Technology
Volume33
Issue number7
DOIs
Publication statusPublished - 2018 May 30

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Keywords

  • scanning tunneling microscopy
  • silicone
  • single crystalline

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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