Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

Ya Ju Lee*, C. H. Chiu, H. C. Kuo, T. C. Lu, S. C. Wang, Kar Wai Ng, Kei May Lau, Zu Po Yang, Allan S.P. Chang, Shawn Yu Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving ligh: extraction efficiency of LED device.

Original languageEnglish
Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
PublisherElectrochemical Society Inc.
Pages225-230
Number of pages6
Edition5
ISBN (Electronic)9781566775717
ISBN (Print)9781566775717
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number5
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC
Period2007/10/072007/10/12

ASJC Scopus subject areas

  • Engineering(all)

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