Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

Ya Ju Lee; C. H. Chiu; H. C. Kuo; T. C. Lu; S. C. Wang; Kar Wai Ng; Kei May Lau; Zu Po Yang; Allan S.P. Chang; Shawn Yu Lin

doi:10.1149/1.2783876

Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

Ya Ju Lee^*, C. H. Chiu, H. C. Kuo, T. C. Lu, S. C. Wang, Kar Wai Ng, Kei May Lau, Zu Po Yang, Allan S.P. Chang, Shawn Yu Lin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving ligh: extraction efficiency of LED device.

Original language	English
Title of host publication	ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	225-230
Number of pages	6
Edition	5
ISBN (Electronic)	9781566775717
ISBN (Print)	9781566775717
DOIs	https://doi.org/10.1149/1.2783876
Publication status	Published - 2007
Externally published	Yes
Event	47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 7 → 2007 Oct 12

Publication series

Name	ECS Transactions
Number	5
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	2007/10/07 → 2007/10/12

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.2783876

Cite this

Lee, Y. J., Chiu, C. H., Kuo, H. C., Lu, T. C., Wang, S. C., Ng, K. W., Lau, K. M., Yang, Z. P., Chang, A. S. P., & Lin, S. Y. (2007). Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS). In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices (5 ed., pp. 225-230). (ECS Transactions; Vol. 11, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/1.2783876

Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS). / Lee, Ya Ju; Chiu, C. H.; Kuo, H. C. et al.
ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5. ed. Electrochemical Society Inc., 2007. p. 225-230 (ECS Transactions; Vol. 11, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, YJ, Chiu, CH, Kuo, HC, Lu, TC, Wang, SC, Ng, KW, Lau, KM, Yang, ZP, Chang, ASP & Lin, SY 2007, Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS). in ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 edn, ECS Transactions, no. 5, vol. 11, Electrochemical Society Inc., pp. 225-230, 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting, Washington, DC, United States, 2007/10/07. https://doi.org/10.1149/1.2783876

Lee YJ, Chiu CH, Kuo HC, Lu TC, Wang SC, Ng KW et al. Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS). In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 ed. Electrochemical Society Inc. 2007. p. 225-230. (ECS Transactions; 5). doi: 10.1149/1.2783876

Lee, Ya Ju ; Chiu, C. H. ; Kuo, H. C. et al. / Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS). ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5. ed. Electrochemical Society Inc., 2007. pp. 225-230 (ECS Transactions; 5).

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title = "Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)",

abstract = "We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving ligh: extraction efficiency of LED device.",

author = "Lee, {Ya Ju} and Chiu, {C. H.} and Kuo, {H. C.} and Lu, {T. C.} and Wang, {S. C.} and Ng, {Kar Wai} and Lau, {Kei May} and Yang, {Zu Po} and Chang, {Allan S.P.} and Lin, {Shawn Yu}",

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series = "ECS Transactions",

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AU - Kuo, H. C.

AU - Lu, T. C.

AU - Wang, S. C.

AU - Ng, Kar Wai

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AB - We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving ligh: extraction efficiency of LED device.

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Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

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