Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

Ya Ju Lee, C. H. Chiu, H. C. Kuo, T. C. Lu, S. C. Wang, Kar Wai Ng, Kei May Lau, Zu Po Yang, Allan S.P. Chang, Shawn Yu Lin

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving ligh: extraction efficiency of LED device.

    Original languageEnglish
    Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
    Pages225-230
    Number of pages6
    Edition5
    DOIs
    Publication statusPublished - 2007 Dec 1
    Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
    Duration: 2007 Oct 72007 Oct 12

    Publication series

    NameECS Transactions
    Number5
    Volume11
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
    CountryUnited States
    CityWashington, DC
    Period07/10/707/10/12

    ASJC Scopus subject areas

    • Engineering(all)

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