Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

Zong Wei Shang; Jun Ma; Wei Dong Liu; Zhi Wei Zheng; Chun Hu Cheng

doi:10.1109/ISNE.2019.8896500

Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

Zong Wei Shang, Jun Ma, Wei Dong Liu, Zhi Wei Zheng^*, Chun Hu Cheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO₂ gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high I_on/I_off of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.

Original language	English
Title of host publication	2019 8th International Symposium on Next Generation Electronics, ISNE 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728120621
DOIs	https://doi.org/10.1109/ISNE.2019.8896500
Publication status	Published - 2019 Oct
Event	8th International Symposium on Next Generation Electronics, ISNE 2019 - Zhengzhou, China Duration: 2019 Oct 9 → 2019 Oct 10

Publication series

Name	2019 8th International Symposium on Next Generation Electronics, ISNE 2019

Conference

Conference	8th International Symposium on Next Generation Electronics, ISNE 2019
Country/Territory	China
City	Zhengzhou
Period	2019/10/09 → 2019/10/10

Keywords

negative capacitance effect
poly-silicon
thin film transistor

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/ISNE.2019.8896500

Cite this

Shang, Z. W., Ma, J., Liu, W. D., Zheng, Z. W., & Cheng, C. H. (2019). Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect. In 2019 8th International Symposium on Next Generation Electronics, ISNE 2019 Article 8896500 (2019 8th International Symposium on Next Generation Electronics, ISNE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2019.8896500

Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect. / Shang, Zong Wei; Ma, Jun; Liu, Wei Dong et al.
2019 8th International Symposium on Next Generation Electronics, ISNE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8896500 (2019 8th International Symposium on Next Generation Electronics, ISNE 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shang, ZW, Ma, J, Liu, WD, Zheng, ZW & Cheng, CH 2019, Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect. in 2019 8th International Symposium on Next Generation Electronics, ISNE 2019., 8896500, 2019 8th International Symposium on Next Generation Electronics, ISNE 2019, Institute of Electrical and Electronics Engineers Inc., 8th International Symposium on Next Generation Electronics, ISNE 2019, Zhengzhou, China, 2019/10/09. https://doi.org/10.1109/ISNE.2019.8896500

Shang ZW, Ma J, Liu WD, Zheng ZW, Cheng CH. Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect. In 2019 8th International Symposium on Next Generation Electronics, ISNE 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8896500. (2019 8th International Symposium on Next Generation Electronics, ISNE 2019). doi: 10.1109/ISNE.2019.8896500

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title = "Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect",

abstract = "In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.",

keywords = "negative capacitance effect, poly-silicon, thin film transistor",

author = "Shang, {Zong Wei} and Jun Ma and Liu, {Wei Dong} and Zheng, {Zhi Wei} and Cheng, {Chun Hu}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by the Fundamental Research Funds for the Central Universities (Grant No. 20720190143) and the National Natural Science Foundation of China (Grant No. 61704141). Publisher Copyright: {\textcopyright} 2019 IEEE.; 8th International Symposium on Next Generation Electronics, ISNE 2019 ; Conference date: 09-10-2019 Through 10-10-2019",

year = "2019",

month = oct,

doi = "10.1109/ISNE.2019.8896500",

language = "English",

series = "2019 8th International Symposium on Next Generation Electronics, ISNE 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Ma, Jun

AU - Liu, Wei Dong

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by the Fundamental Research Funds for the Central Universities (Grant No. 20720190143) and the National Natural Science Foundation of China (Grant No. 61704141). Publisher Copyright: © 2019 IEEE.

PY - 2019/10

Y1 - 2019/10

N2 - In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.

AB - In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.

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Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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