@inproceedings{e3534c340846423db05cbfce964e86b9,
title = "Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect",
abstract = "In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.",
keywords = "negative capacitance effect, poly-silicon, thin film transistor",
author = "Shang, {Zong Wei} and Jun Ma and Liu, {Wei Dong} and Zheng, {Zhi Wei} and Cheng, {Chun Hu}",
year = "2019",
month = oct,
doi = "10.1109/ISNE.2019.8896500",
language = "English",
series = "2019 8th International Symposium on Next Generation Electronics, ISNE 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 8th International Symposium on Next Generation Electronics, ISNE 2019",
note = "8th International Symposium on Next Generation Electronics, ISNE 2019 ; Conference date: 09-10-2019 Through 10-10-2019",
}