Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

Zong Wei Shang, Jun Ma, Wei Dong Liu, Zhi Wei Zheng, Chun Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.

Original languageEnglish
Title of host publication2019 8th International Symposium on Next Generation Electronics, ISNE 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728120621
DOIs
Publication statusPublished - 2019 Oct
Event8th International Symposium on Next Generation Electronics, ISNE 2019 - Zhengzhou, China
Duration: 2019 Oct 92019 Oct 10

Publication series

Name2019 8th International Symposium on Next Generation Electronics, ISNE 2019

Conference

Conference8th International Symposium on Next Generation Electronics, ISNE 2019
CountryChina
CityZhengzhou
Period19/10/919/10/10

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Keywords

  • negative capacitance effect
  • poly-silicon
  • thin film transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Shang, Z. W., Ma, J., Liu, W. D., Zheng, Z. W., & Cheng, C. H. (2019). Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect. In 2019 8th International Symposium on Next Generation Electronics, ISNE 2019 [8896500] (2019 8th International Symposium on Next Generation Electronics, ISNE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2019.8896500