Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack
Chien Liu, Ping Guang Chen, Meng Jie Xie, Shao Nong Liu, Jun Wei Lee, Shao Jia Huang, Sally Liu, Yu Sheng Chen, Heng Yuan Lee, Ming Han Liao, Pang Shiu Chen, Min Hung Lee
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