INIS
simulation
100%
implementation
100%
operation
100%
gallium nitrides
100%
transistors
100%
lasers
100%
electron mobility
100%
width
25%
modulation
25%
pulses
25%
equivalent circuits
25%
dynamics
12%
power
12%
devices
12%
computer codes
12%
wave forms
12%
wires
12%
waveforms
12%
operational amplifiers
12%
mosfet
12%
printed circuits
12%
Physics
Simulation
100%
Semiconductor Laser
100%
High Electron Mobility Transistors
100%
Gallium
100%
Width
33%
Independent Variables
33%
Differences
16%
Model
16%
Frequencies
16%
Amplifier
16%
Field Effect Transistor
16%
Cycles
16%
Dynamic Response
16%
Pulsed Laser
16%
Continuous Wave Laser
16%
Material Science
Transistor
100%
Electron Mobility
100%
Gallium Nitride
100%
Laser Diode
100%
Electronic Circuit
66%
Laser
33%
Devices
16%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Amplifier
16%
Engineering
Parasitic Element
66%
Equivalent Circuit Model
16%