Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

D. R. Hang; C. F. Huang; W. K. Hung; Y. H. Chang; J. C. Chen; H. C. Yang; Y. F. Chen; D. K. Shih; T. Y. Chu; H. H. Lin

doi:10.1088/0268-1242/17/9/317

Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

D. R. Hang^*, C. F. Huang, W. K. Hung, Y. H. Chang, J. C. Chen, H. C. Yang, Y. F. Chen, D. K. Shih, T. Y. Chu, H. H. Lin

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We present the first investigation of Shubnikov-de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees with the bowing effect due to the incorporation of nitrogen atoms. The nitrogen content can be estimated to be 0.4% using the PL peak positions as well as x-ray diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 10¹¹ cm^-2 and the effective mass is 0.1 ± 0.01 m₀. The enhancement of the effective mass is mainly due to the incorporation of the nitrogen atoms in the InAs lattice, which is consistent with a recent study on InAsN bulk alloys. The large increase of the effective mass cannot be explained by the simple band anticrossing model. In addition, we observe a temperature-independent magnetoresistivity at a critical magnetic field. Our analysis supports the fact that the value of the critical exponent in the quantum Hall effect is not universal.

Original language	English
Pages (from-to)	999-1003
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	17
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/17/9/317
Publication status	Published - 2002 Sept

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/17/9/317

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title = "Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well",

abstract = "We present the first investigation of Shubnikov-de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees with the bowing effect due to the incorporation of nitrogen atoms. The nitrogen content can be estimated to be 0.4% using the PL peak positions as well as x-ray diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 1011 cm-2 and the effective mass is 0.1 ± 0.01 m0. The enhancement of the effective mass is mainly due to the incorporation of the nitrogen atoms in the InAs lattice, which is consistent with a recent study on InAsN bulk alloys. The large increase of the effective mass cannot be explained by the simple band anticrossing model. In addition, we observe a temperature-independent magnetoresistivity at a critical magnetic field. Our analysis supports the fact that the value of the critical exponent in the quantum Hall effect is not universal.",

author = "Hang, {D. R.} and Huang, {C. F.} and Hung, {W. K.} and Chang, {Y. H.} and Chen, {J. C.} and Yang, {H. C.} and Chen, {Y. F.} and Shih, {D. K.} and Chu, {T. Y.} and Lin, {H. H.}",

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T1 - Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

AU - Hang, D. R.

AU - Huang, C. F.

AU - Hung, W. K.

AU - Chang, Y. H.

AU - Chen, J. C.

AU - Yang, H. C.

AU - Chen, Y. F.

AU - Shih, D. K.

AU - Chu, T. Y.

AU - Lin, H. H.

PY - 2002/9

Y1 - 2002/9

N2 - We present the first investigation of Shubnikov-de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees with the bowing effect due to the incorporation of nitrogen atoms. The nitrogen content can be estimated to be 0.4% using the PL peak positions as well as x-ray diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 1011 cm-2 and the effective mass is 0.1 ± 0.01 m0. The enhancement of the effective mass is mainly due to the incorporation of the nitrogen atoms in the InAs lattice, which is consistent with a recent study on InAsN bulk alloys. The large increase of the effective mass cannot be explained by the simple band anticrossing model. In addition, we observe a temperature-independent magnetoresistivity at a critical magnetic field. Our analysis supports the fact that the value of the critical exponent in the quantum Hall effect is not universal.

AB - We present the first investigation of Shubnikov-de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees with the bowing effect due to the incorporation of nitrogen atoms. The nitrogen content can be estimated to be 0.4% using the PL peak positions as well as x-ray diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 1011 cm-2 and the effective mass is 0.1 ± 0.01 m0. The enhancement of the effective mass is mainly due to the incorporation of the nitrogen atoms in the InAs lattice, which is consistent with a recent study on InAsN bulk alloys. The large increase of the effective mass cannot be explained by the simple band anticrossing model. In addition, we observe a temperature-independent magnetoresistivity at a critical magnetic field. Our analysis supports the fact that the value of the critical exponent in the quantum Hall effect is not universal.

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Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

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