Short channel effect improved strained-Si:C-source/drain PMOSFETs

M. H. Lee; S. T. Chang; S. Maikap; K. W. Shen; W. C. Wang

doi:10.1016/j.apsusc.2008.02.178

Short channel effect improved strained-Si:C-source/drain PMOSFETs

M. H. Lee^*, S. T. Chang, S. Maikap, K. W. Shen, W. C. Wang

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (>900 °C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.

Original language	English
Pages (from-to)	6144-6146
Number of pages	3
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.178
Publication status	Published - 2008 Jul 30

Keywords

Retardation
Short channel effect
Strained-Si:C

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2008.02.178

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title = "Short channel effect improved strained-Si:C-source/drain PMOSFETs",

abstract = "The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (>900 °C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.",

keywords = "Retardation, Short channel effect, Strained-Si:C",

author = "Lee, {M. H.} and Chang, {S. T.} and S. Maikap and Shen, {K. W.} and Wang, {W. C.}",

note = "Funding Information: The authors are grateful for discussion with Prof. C.W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, and support by National Science Council (NSC 96-2112-M-003-013), National Nano Device Laboratories (NDL), and Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Taiwan.",

year = "2008",

month = jul,

day = "30",

doi = "10.1016/j.apsusc.2008.02.178",

language = "English",

volume = "254",

pages = "6144--6146",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "19",

}

TY - JOUR

T1 - Short channel effect improved strained-Si:C-source/drain PMOSFETs

AU - Lee, M. H.

AU - Chang, S. T.

AU - Maikap, S.

AU - Shen, K. W.

AU - Wang, W. C.

N1 - Funding Information: The authors are grateful for discussion with Prof. C.W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, and support by National Science Council (NSC 96-2112-M-003-013), National Nano Device Laboratories (NDL), and Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Taiwan.

PY - 2008/7/30

Y1 - 2008/7/30

N2 - The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (>900 °C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.

AB - The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (>900 °C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.

KW - Retardation

KW - Short channel effect

KW - Strained-Si:C

UR - http://www.scopus.com/inward/record.url?scp=45049085189&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45049085189&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.02.178

DO - 10.1016/j.apsusc.2008.02.178

M3 - Article

AN - SCOPUS:45049085189

SN - 0169-4332

VL - 254

SP - 6144

EP - 6146

JO - Applied Surface Science

JF - Applied Surface Science

IS - 19

ER -

Short channel effect improved strained-Si:C-source/drain PMOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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