Short channel effect improved strained-Si:C-source/drain PMOSFETs

M. H. Lee*, S. T. Chang, S. Maikap, K. W. Shen, W. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (>900 °C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.

Original languageEnglish
Pages (from-to)6144-6146
Number of pages3
JournalApplied Surface Science
Issue number19
Publication statusPublished - 2008 Jul 30


  • Retardation
  • Short channel effect
  • Strained-Si:C

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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