Short channel effect improved strained-Si:C-source/drain PMOSFETs

Min-Hung Lee, S. T. Chang, S. Maikap, K. W. Shen, W. C. Wang

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (>900 °C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.

    Original languageEnglish
    Pages (from-to)6144-6146
    Number of pages3
    JournalApplied Surface Science
    Volume254
    Issue number19
    DOIs
    Publication statusPublished - 2008 Jul 30

    Fingerprint

    Carbon
    Boron
    Buffers
    Microscopes
    X ray diffraction
    Temperature

    Keywords

    • Retardation
    • Short channel effect
    • Strained-Si:C

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films

    Cite this

    Short channel effect improved strained-Si:C-source/drain PMOSFETs. / Lee, Min-Hung; Chang, S. T.; Maikap, S.; Shen, K. W.; Wang, W. C.

    In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6144-6146.

    Research output: Contribution to journalArticle

    Lee, Min-Hung ; Chang, S. T. ; Maikap, S. ; Shen, K. W. ; Wang, W. C. / Short channel effect improved strained-Si:C-source/drain PMOSFETs. In: Applied Surface Science. 2008 ; Vol. 254, No. 19. pp. 6144-6146.
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    AU - Maikap, S.

    AU - Shen, K. W.

    AU - Wang, W. C.

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