Short channel effect improved strained-Si:C-source/drain PMOSFETs

M. H. Lee, S. T. Chang, S. Maikap, K. W. Shen, W. C. Wang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (>900 °C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.

Original languageEnglish
Pages (from-to)6144-6146
Number of pages3
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

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Carbon
Boron
Buffers
Microscopes
X ray diffraction
Temperature

Keywords

  • Retardation
  • Short channel effect
  • Strained-Si:C

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Short channel effect improved strained-Si:C-source/drain PMOSFETs. / Lee, M. H.; Chang, S. T.; Maikap, S.; Shen, K. W.; Wang, W. C.

In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6144-6146.

Research output: Contribution to journalArticle

Lee, M. H. ; Chang, S. T. ; Maikap, S. ; Shen, K. W. ; Wang, W. C. / Short channel effect improved strained-Si:C-source/drain PMOSFETs. In: Applied Surface Science. 2008 ; Vol. 254, No. 19. pp. 6144-6146.
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AU - Wang, W. C.

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