Self-regulating and diameter-selective growth of GaN nanowires

Chin Kuei Kuo; Chih Wei Hsu; Chien Ting Wu; Zon Huang Lan; Chung Yuan Mou; Chia Chun Chen; Ying Jay Yang; Li Chyong Chen; Kuei Hsien Chen

doi:10.1088/0957-4484/17/11/S17

Self-regulating and diameter-selective growth of GaN nanowires

Chin Kuei Kuo, Chih Wei Hsu, Chien Ting Wu, Zon Huang Lan, Chung Yuan Mou, Chia Chun Chen, Ying Jay Yang, Li Chyong Chen, Kuei Hsien Chen^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.

Original language	English
Pages (from-to)	S332-S337
Journal	Nanotechnology
Volume	17
Issue number	11
DOIs	https://doi.org/10.1088/0957-4484/17/11/S17
Publication status	Published - 2006 May 19

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/17/11/S17

Cite this

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abstract = "We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.",

author = "Kuo, {Chin Kuei} and Hsu, {Chih Wei} and Wu, {Chien Ting} and Lan, {Zon Huang} and Mou, {Chung Yuan} and Chen, {Chia Chun} and Yang, {Ying Jay} and Chen, {Li Chyong} and Chen, {Kuei Hsien}",

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T1 - Self-regulating and diameter-selective growth of GaN nanowires

AU - Kuo, Chin Kuei

AU - Hsu, Chih Wei

AU - Wu, Chien Ting

AU - Lan, Zon Huang

AU - Mou, Chung Yuan

AU - Chen, Chia Chun

AU - Yang, Ying Jay

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

PY - 2006/5/19

Y1 - 2006/5/19

N2 - We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.

AB - We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.

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Self-regulating and diameter-selective growth of GaN nanowires

Abstract

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