Self-regulating and diameter-selective growth of GaN nanowires

Chin Kuei Kuo, Chih Wei Hsu, Chien Ting Wu, Zon Huang Lan, Chung Yuan Mou, Chia Chun Chen, Ying Jay Yang, Li Chyong Chen, Kuei Hsien Chen

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22 Citations (Scopus)

Abstract

We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.

Original languageEnglish
Pages (from-to)S332-S337
JournalNanotechnology
Volume17
Issue number11
DOIs
Publication statusPublished - 2006 May 19

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Kuo, C. K., Hsu, C. W., Wu, C. T., Lan, Z. H., Mou, C. Y., Chen, C. C., Yang, Y. J., Chen, L. C., & Chen, K. H. (2006). Self-regulating and diameter-selective growth of GaN nanowires. Nanotechnology, 17(11), S332-S337. https://doi.org/10.1088/0957-4484/17/11/S17