Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

S. W. Lee; L. J. Chen; P. S. Chen; M. J. Tsai; C. W. Liu; T. Y. Chien; C. T. Chia

doi:10.1063/1.1635073

Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

S. W. Lee^*, L. J. Chen, P. S. Chen, M. J. Tsai, C. W. Liu, T. Y. Chien, C. T. Chia

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.

Original language	English
Pages (from-to)	5283-5285
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	25
DOIs	https://doi.org/10.1063/1.1635073
Publication status	Published - 2003 Dec 22

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si",

abstract = "The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.",

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AU - Lee, S. W.

AU - Chen, L. J.

AU - Chen, P. S.

AU - Tsai, M. J.

AU - Liu, C. W.

AU - Chien, T. Y.

AU - Chia, C. T.

PY - 2003/12/22

Y1 - 2003/12/22

N2 - The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.

AB - The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.

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Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

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