Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

S. W. Lee, L. J. Chen, P. S. Chen, M. J. Tsai, C. W. Liu, T. Y. Chien, C. T. Chia

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Abstract

The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.

Original languageEnglish
Pages (from-to)5283-5285
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number25
DOIs
Publication statusPublished - 2003 Dec 22

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, S. W., Chen, L. J., Chen, P. S., Tsai, M. J., Liu, C. W., Chien, T. Y., & Chia, C. T. (2003). Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si. Applied Physics Letters, 83(25), 5283-5285. https://doi.org/10.1063/1.1635073