SCR device for on-chip ESD protection in RF power amplifier

Chun-Yu Lin, Ming Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013 Dec 23
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 2013 Jun 32013 Jun 5

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period13/6/313/6/5

Fingerprint

Radio frequency amplifiers
Electrostatic discharge
Thyristors
Power amplifiers
Capacitance

Keywords

  • Electrostatic discharge (ESD)
  • power amplifier (PA)
  • radio-frequency (RF)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lin, C-Y., & Ker, M. D. (2013). SCR device for on-chip ESD protection in RF power amplifier. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628124] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628124

SCR device for on-chip ESD protection in RF power amplifier. / Lin, Chun-Yu; Ker, Ming Dou.

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628124 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, C-Y & Ker, MD 2013, SCR device for on-chip ESD protection in RF power amplifier. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628124, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628124
Lin C-Y, Ker MD. SCR device for on-chip ESD protection in RF power amplifier. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628124. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628124
Lin, Chun-Yu ; Ker, Ming Dou. / SCR device for on-chip ESD protection in RF power amplifier. 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).
@inproceedings{1a25c51e01fb46a597894177f61eac7e,
title = "SCR device for on-chip ESD protection in RF power amplifier",
abstract = "To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.",
keywords = "Electrostatic discharge (ESD), power amplifier (PA), radio-frequency (RF), silicon-controlled rectifier (SCR)",
author = "Chun-Yu Lin and Ker, {Ming Dou}",
year = "2013",
month = "12",
day = "23",
doi = "10.1109/EDSSC.2013.6628124",
language = "English",
isbn = "9781467325233",
series = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",
booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

}

TY - GEN

T1 - SCR device for on-chip ESD protection in RF power amplifier

AU - Lin, Chun-Yu

AU - Ker, Ming Dou

PY - 2013/12/23

Y1 - 2013/12/23

N2 - To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.

AB - To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.

KW - Electrostatic discharge (ESD)

KW - power amplifier (PA)

KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=84890525792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890525792&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2013.6628124

DO - 10.1109/EDSSC.2013.6628124

M3 - Conference contribution

AN - SCOPUS:84890525792

SN - 9781467325233

T3 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

ER -