SCR device for on-chip ESD protection in RF power amplifier

Chun-Yu Lin, Ming Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013 Dec 23
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 2013 Jun 32013 Jun 5

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period13/6/313/6/5

Keywords

  • Electrostatic discharge (ESD)
  • power amplifier (PA)
  • radio-frequency (RF)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Lin, C-Y., & Ker, M. D. (2013). SCR device for on-chip ESD protection in RF power amplifier. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628124] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628124