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Schottky-barrier resistive memory with highly uniform switching
C. H. Cheng
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Corresponding author for this work
Department of Mechatronic Engineering
Research output
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Article
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peer-review
3
Citations (Scopus)
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Engineering & Materials Science
Oxygen vacancies
100%
Electrons
65%
Compliance
56%
Electrodes
49%
Data storage equipment
39%
Electric potential
33%
Chemical Compounds
Schottky Barrier
88%
Compliance
78%
Voltage
46%
Electron Particle
35%
Behavior as Electrode
32%
Dioxygen
31%
Medicine & Life Sciences
Psychological Power
61%
Memory
47%
Compliance
29%
Electrodes
28%
Electrons
25%
Oxygen
23%
Physics & Astronomy
current distribution
71%
electrodes
20%
oxygen
19%
electric potential
17%
electrons
13%