Schottky-barrier resistive memory with highly uniform switching

C. H. Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

Original languageEnglish
Pages (from-to)5166-5170
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number7
Publication statusPublished - 2014 Jul


  • Hopping Conduction
  • Resistive Random Access Memory (RRAM)
  • Schottky Barrier

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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