Schottky-barrier resistive memory with highly uniform switching

C. H. Cheng

doi:10.1166/jnn.2014.8723

Schottky-barrier resistive memory with highly uniform switching

C. H. Cheng^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeO_x interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

Original language	English
Pages (from-to)	5166-5170
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	7
DOIs	https://doi.org/10.1166/jnn.2014.8723
Publication status	Published - 2014 Jul

Keywords

Hopping Conduction
Resistive Random Access Memory (RRAM)
Schottky Barrier

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2014.8723

Cite this

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abstract = "Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.",

keywords = "Hopping Conduction, Resistive Random Access Memory (RRAM), Schottky Barrier",

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AB - Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

KW - Hopping Conduction

KW - Resistive Random Access Memory (RRAM)

KW - Schottky Barrier

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Schottky-barrier resistive memory with highly uniform switching

Abstract

Keywords

ASJC Scopus subject areas

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